Title :
The Raman microprobe: A quantitative analytical tool to characterize laser-processed semiconductors
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
Abstract :
The Raman microprobe technique can provide quantitative information on structure, composition, homogeneity, and stress, with 1-μm resolution. It is also a nondestructive technique that requires no special sample preparation and can be used in situ. After an introduction to Raman scattering and a description of the technique itself, the author reviews specific applications in the fields of laser recrystallization and laser damage of layered structures.
Keywords :
Raman spectra of inorganic solids; laser beam effects; probes; recrystallisation; semiconductors; spectrochemical analysis; Raman microprobe; Raman scattering; composition; homogeneity; laser damage; laser recrystallization; laser-processed semiconductors; nondestructive technique; quantitative analytical tool; stress; Laser beams; Materials; Measurement by laser beam; Raman scattering; Semiconductor device measurement; Semiconductor lasers; Stress;
Journal_Title :
Circuits and Devices Magazine, IEEE
DOI :
10.1109/MCD.1986.6311769
