DocumentCode
1291451
Title
A 90 nm CMOS 
11 dBm IIP3 4 mW Dual-Band LNA for Cellular Handsets
Author
Fatin, Gholamreza Zare ; Koozehkanani, Ziaddin Daei ; Sjöland, Henrik
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Tabriz, Tabriz, Iran
Volume
20
Issue
9
fYear
2010
Firstpage
513
Lastpage
515
Abstract
A dual-band cross-coupled common-gate low noise amplifier (LNA) utilizing post distortion cancellation is introduced. A differential pair biased in weak inversion is used to cancel the third-order intermodulation (IMD3) distortion of the main amplifier. An on-chip circuit is used for biasing the main and auxiliary amplifier. The IIP3 of the LNA is improved by more than 4 dB in both bands, located at 1.8 and 2 GHz, respectively. The IIP3 of the amplifier is +11 dBm, the gain is 15 and 16 dB, and the Noise Figure (NF) is 4 and 3.5 dB in the low and high bands, respectively. The LNA is implemented in a 90 nm CMOS process and draws 4 mA from a 1 V supply.
Keywords
CMOS integrated circuits; cellular radio; intermodulation distortion; low noise amplifiers; CMOS IIP3 dual-band LNA; cellular handsets; current 4 mA; frequency 1.8 GHz; frequency 2 GHz; gain 15 dB; gain 16 dB; low noise amplifier; noise figure 3.5 dB; noise figure 4 dB; post distortion cancellation; power 4 mW; size 90 nm; third-order intermodulation distortion; voltage 1 V; weak inversion; Broadband amplifiers; Circuit noise; Design optimization; Distortion measurement; Dual band; Frequency; Gain; Impedance matching; Linearity; Low-noise amplifiers; Noise; Noise cancellation; Noise figure; Noise measurement; Semiconductor device measurement; Common-gate; cross-coupling; distortion cancellation; dual-band; low noise amplifier (LNA); weak inversion;
fLanguage
English
Journal_Title
Microwave and Wireless Components Letters, IEEE
Publisher
ieee
ISSN
1531-1309
Type
jour
DOI
10.1109/LMWC.2010.2055839
Filename
5545483
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