DocumentCode
1291456
Title
Low frequency conductance voltage analysis of Si/GexSi 1-x/Si heterojunction bipolar transistors
Author
Neugroschel, Arnost ; Li, Guoxin ; Sah, Chih-Tang
Author_Institution
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA
Volume
47
Issue
1
fYear
2000
fDate
1/1/2000 12:00:00 AM
Firstpage
187
Lastpage
196
Abstract
Low-frequency-conductance-voltage (LFGV) method for analysis of heterojunction bipolar transistors (HBTs) is presented. The method gives accurate quantitative values for the important minority-carrier transport parameters that underlie the transistor performance, such as the base diffusion length, lifetime, diffusion coefficient and transit time. The method also allows a detailed analysis of the current gain and emitter injection efficiency. The analytical model and experimental methodology are demonstrated for a Si/GexSi1-x/Si HBT with a trapeziodal and linearly graded Ge profiles in the base. The LFGV method is general and can be applied to other bipolar transistors, including those based on III-V materials
Keywords
Ge-Si alloys; carrier mobility; diffusion; elemental semiconductors; heterojunction bipolar transistors; minority carriers; semiconductor materials; silicon; Si-GeSi-Si; base diffusion length; current gain; diffusion coefficient; emitter injection efficiency; heterojunction bipolar transistors; linearly graded profiles; low frequency conductance voltage analysis; minority-carrier transport parameters; transit time; trapeziodal graded profiles; Analytical models; Bipolar transistors; Fabrication; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Low voltage; Performance gain; Silicon germanium; Temperature;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.817585
Filename
817585
Link To Document