Laser-processed thin-film transistors fabricated from sputtered amorphous-silicon films

Author

Giust, G.K. ; Sigmon, T.W.

Author_Institution

LSI Logic, Santa Clara, CA, USA

Volume

47

Issue

1

fYear

2000

fDate

1/1/2000 12:00:00 AM

Firstpage

207

Lastpage

213

Abstract

Low-temperature polysilicon thin-film transistors (TFTs) have been fabricated from sputtered silicon films and characterized as a function of as-deposited hydrogen (H) content and laser crystallization fluence. A general trend is observed where TFT performance improves as the H content is lowered. Devices made from -0% H sputtered films perform similar to those made from low-pressure chemical-vapor deposition processes (LPCVD), but are fabricated at a much lower processing temperature (300°C). The best sputtered TFTs had mobilities of -200 cm2/Vs, and on/off current ratios of more that 10⁸

Keywords

amorphous semiconductors; carrier mobility; elemental semiconductors; hydrogen; laser materials processing; semiconductor thin films; silicon; sputtered coatings; thin film transistors; 300 degC; Si:H; carrier mobilities; laser crystallization fluence; laser-processed thin-film transistors; on/off current ratios; polysilicon thin-film transistors; processing temperature; sputtered amorphous thin films; Chemical lasers; Crystallization; Gas lasers; Manufacturing; Plasma temperature; Pulsed laser deposition; Semiconductor films; Silicon; Substrates; Thin film transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.817587

Filename

817587