Improved Monte Carlo algorithm for the simulation of δ-doped AlInAs/GaInAs HEMTs

Author

Mateos, Javier ; González, Tomás ; Pardo, Daniel ; Hoel, Virginie ; Happy, Henri ; Cappy, Alain

Author_Institution

Dept. de Fisica Aplicada, Salamanca Univ., Spain

Volume

47

Issue

1

fYear

2000

fDate

1/1/2000 12:00:00 AM

Firstpage

250

Lastpage

253

Abstract

A classical Monte Carlo (MC) device simulation has been modified to locally introduce the effects of electron degeneracy and nonequilibrium screening. Its validity in the case of AlInAs/GaInAs HEMTs has been checked through the comparison, first, with a quantum Schrodinger-Poisson (SP) simulation in the case of a complicated layer structure, which is actually used in the fabrication of real devices, and second, with experimental results of static characteristics of recessed δ-doped HEMTs

Keywords

III-V semiconductors; Monte Carlo methods; Poisson equation; Schrodinger equation; aluminium compounds; doping profiles; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device models; AlInAs-GaInAs; HEMTs; Monte Carlo algorithm; complicated layer structure; electron degeneracy; nonequilibrium screening; quantum Schrodinger-Poisson simulation; recessed δ-doped devices; static characteristics; Computational modeling; Electron microscopy; Fabrication; HEMTs; Heterojunctions; Hot carrier effects; Impurities; Monte Carlo methods; Particle scattering; Tunneling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.817592

Filename

817592