DocumentCode
1291718
Title
Highly integrated three-dimensional MMIC single-chip receiver and transmitter
Author
Toyoda, Ichihiko ; Tokumitsu, Tsuneo ; Aikawa, Masayoshi
Author_Institution
NTT Wireless Syst. Labs., Kanagawa, Japan
Volume
44
Issue
12
fYear
1996
fDate
12/1/1996 12:00:00 AM
Firstpage
2340
Lastpage
2346
Abstract
The three-dimensional monolithic microwave/millimeter wave integrated circuits (MMIC) structure that places thin polyimide-film layers on wafers significantly increases the integration level of MMICs. We developed 9.2-12 GHz receiver and 95-14 GHz transmitter chips with 20 dB gain using the three-dimensional MMIC technology. The receiver chip includes a four-stage front-end amplifier, a local oscillator (LO) amplifier, and an image-rejection mixer in a 2×2 mm chip. The transmitter chip also includes an IF amplifier with balanced outputs, an LO amplifier, an RF buffer amplifier, and a balanced upconverter in a 1.9×1.9 mm chip. The integration levels of these chips are nearly three times higher than those of conventional planar devices. The design method of each function block, such as the amplifier and mixer, is also described
Keywords
MMIC amplifiers; MMIC frequency convertors; MMIC mixers; MMIC oscillators; field effect MMIC; microwave receivers; polymer films; radio transmitters; 20 dB; 9.2 to 14 GHz; IF amplifier; LO amplifier; RF buffer amplifier; balanced outputs; balanced upconverter; four-stage front-end amplifier; image-rejection mixer; local oscillator; single-chip receiver/transmitter; thin polyimide-film layers; three-dimensional MMIC; Gain; Integrated circuit technology; Local oscillators; MIMICs; MMICs; Microwave integrated circuits; Millimeter wave technology; Monolithic integrated circuits; Radiofrequency amplifiers; Transmitters;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/22.554553
Filename
554553
Link To Document