Complementary resistive switch based stateful logic operations using material implication

Memristor based logic and memories are increasingly becoming one of the fundamental building blocks for future system design. Hence, it is important to explore various methodologies for implementing these blocks. In this paper, we present a novel Complementary Resistive Switching (CRS) based stateful logic operations using material implication. The proposed solution benefits from exponential reduction in sneak path current in crossbar implemented logic. We validated the effectiveness of our solution through SPICE simulations on a number of logic circuits. It has been shown that only 4 steps are required for implementing N input NAND gate whereas memristor based stateful logic needs N+1 steps.