• DocumentCode
    1292031
  • Title

    A guide to short-channel effects in MOSFETs

  • Author

    Duvvury, Charvaka

  • Author_Institution
    Texas Instrum. Inc., Houston, TX, USA
  • Volume
    2
  • Issue
    6
  • fYear
    1986
  • Firstpage
    6
  • Lastpage
    10
  • Abstract
    Short-channel effects form a very important consideration for the performance of very-large-scale integrated circuits built with ultrasmall devices. Definitions of each of the observed short-channel effects in MOSFETs are given by describing their respective phenomenological meanings. The impact of these parameters on the measured I-V curves, as well as the differentiation between long-channel and short-channel behavior from the measured data, are discussed.
  • Keywords
    VLSI; field effect integrated circuits; insulated gate field effect transistors; I/V curves; MOSFETs; VLSI; monolithic IC; short-channel effects; very-large-scale integrated circuits; Equations; Logic gates; MOSFETs; Subthreshold current;
  • fLanguage
    English
  • Journal_Title
    Circuits and Devices Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    8755-3996
  • Type

    jour

  • DOI
    10.1109/MCD.1986.6311897
  • Filename
    6311897
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1292031