• DocumentCode
    1292212
  • Title

    Fabrication and Analysis of Epitaxially Grown Ge _{1-x} Sn _x Microdisk Resonator With 20-nm Fre

  • Author

    Seongjae Cho ; Chen, Ru Shan ; Sukmo Koo ; Shambat, Gary ; Lin, Huiming ; NamKyoo Park ; Vuckovic, Jelena ; Kamins, Theodore I. ; Byung-Gook Park ; Harris, James S.

  • Author_Institution
    Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
  • Volume
    23
  • Issue
    20
  • fYear
    2011
  • Firstpage
    1535
  • Lastpage
    1537
  • Abstract
    In this work, a whispering gallery mode (WGM) microdisk resonator based on Ge1-xSnx grown by molecular beam epitaxy (MBE) was fabricated and characterized. Various process conditions and different Sn contents (4% and 1%) were explored to confirm the feasibility of Ge1-xSnx for microcavity device operation. Optical modes with wavelengths in the infrared (IR) range beyond 1550 nm were successfully confined in the devices fabricated with different diameters, and free-spectral ranges (FSRs) near 20 nm were obtained.
  • Keywords
    germanium alloys; integrated optics; micro-optics; molecular beam epitaxial growth; optical resonators; tin alloys; whispering gallery modes; GeSn; epitaxially grown microdisk resonator; free spectral range; integrated optics; molecular beam epitaxy; optical modes; wavelength 1550 nm; whispering gallery mode; Optical device fabrication; Optical fibers; Optical resonators; Optical variables control; Silicon; Substrates; Free-spectral range (FSR); GeSn; infrared (IR); microdisk resonator; molecular beam epitaxy (MBE); whispering gallery mode (WGM);
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2011.2163929
  • Filename
    5977001
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1292212