Title :
L-band internally matched Si-MMIC front-end
Author :
Suematsu, Noriharu ; Ono, Masayoshi ; Kubo, Shunji ; Iyama, Yoshitada ; Ishida, Osami
Author_Institution :
Inf. Technol. R&D Center, Mitsubishi Electr. Corp., Kamakura, Japan
fDate :
12/1/1996 12:00:00 AM
Abstract :
A 1.9 GHz-band internally matched Si-MMIC front-end, fabricated in standard 0.8 μm BiCMOS process, was developed. This IC front-end contains a MOSFET T/R switch, a two-stage BJT low noise amplifier (LNA), and a down converter BJT mixer. Since the circuits are monolithically integrated on a low resistivity Si substrate, the coplanar waveguide (CPW) type spiral inductors are used to reduce the dielectric loss of on-chip matching circuits. The T/R switch has measured insertion loss of 2.5 dB and isolation of 25.5 dB at 0/3 V control voltage. The two-stage LNA has gain of 17.1 dB and noise figure (NF) of 2.9 dB at 2 V, 4 mA dc supply. The mixer has conversion gain of 5.9 dB and NF of 15 dB at 2 V, 1.7 mA dc supply. The measured performance of the fabricated Si-MMIC front-end indicates the possibility of application to mobile communication handset terminals
Keywords :
BiCMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; UHF mixers; coplanar waveguides; elemental semiconductors; field effect transistor switches; losses; mobile communication; silicon; 0.8 micron; 1.7 mA; 1.9 GHz; 15 dB; 17.1 dB; 2 V; 2.5 dB; 2.9 dB; 4 mA; 5.9 dB; BJT low noise amplifier; BiCMOS process; MMIC front-end; MOSFET T/R switch; Si; coplanar waveguide; dielectric loss; down converter BJT mixer; insertion loss; internally matched IC; isolation; mobile communication handset terminals; spiral inductors; two-stage LNA; Coplanar waveguides; Dielectric loss measurement; Dielectric losses; Dielectric substrates; Gain; Integrated circuit noise; L-band; Noise measurement; Standards development; Switches;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
