Integrated coplanar mm-wave amplifier with gain control using a dual-gate InP HEMT

Author

Schefer, Matthias ; Meier, H.-P. ; Klepser, Bernd-Ulrich ; Patrick, William ; Bächtold, Werner

Author_Institution

Lab. for EM Fields & Microwave Electrons, Eidgenossische Tech. Hochschule, Zurich, Switzerland

Volume

44

Issue

12

fYear

1996

fDate

12/1/1996 12:00:00 AM

Firstpage

2379

Lastpage

2383

Abstract

Variable gain mm-wave amplifiers, based on InP high-electron mobility transistor (HEMT) devices, are demonstrated. The two-stage circuits consist of a single-gate (SG) and dual-gate (DG) transistor. The influence of the gate recess depth on the gain control range is investigated. A maximum gain control range of 32 dB is achieved which is the largest reported in the mm-wave range for a monolithically integrated variable gain amplifier (VGA). The maximum gain is 25.7 dB at 48.5 GHz with a 3-dB bandwidth of 10.5 GHz. The circuits were fabricated in coplanar technology

Keywords

HEMT integrated circuits; III-V semiconductors; automatic gain control; coplanar waveguides; field effect MIMIC; indium compounds; millimetre wave amplifiers; 10.5 GHz; 25.7 dB; 48.5 GHz; InP; coplanar mm-wave amplifier; coplanar technology; dual-gate HEMT; gain control; gain control range; gate recess depth; two-stage circuits; variable gain amplifier; Bandwidth; Circuits; Feedback; Frequency; Gain control; HEMTs; Indium phosphide; MODFETs; Microwave devices; Radio spectrum management;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.554565

Filename

554565