Title :
A 2.4-GHz silicon-on-sapphire CMOS low-noise amplifier
Author :
Johnson, R.A. ; Chang, C.E. ; de la Houssaye, P.R. ; Wood, M.E. ; Garcia, G.A. ; Asbeck, P.M. ; Lagnado, I.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
fDate :
10/1/1997 12:00:00 AM
Abstract :
A low-noise amplifier operating at 2.4 GHz has been fabricated with MOSFETs in silicon-on-sapphire technology. The amplifier has a 2.8-dB noise figure, 10-dB gain, and 14-dBm output referred IP3 with 14-mW power dissipation. The amplifier was matched for minimum noise with on-chip spiral inductors and capacitors
Keywords :
CMOS analogue integrated circuits; MMIC amplifiers; UHF amplifiers; UHF integrated circuits; integrated circuit noise; 10 dB; 14 mW; 2.4 GHz; 2.8 dB; SOS CMOS LNA; SOS MOSFET technology; Si-Al2O3; UHF IC; low-noise amplifier; onchip spiral inductors; CMOS technology; Circuit noise; Circuit simulation; FETs; Low-noise amplifiers; Microwave circuits; Noise figure; Optical amplifiers; Power dissipation; Spirals;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
