Co-design of SAW duplexer and LNA in RF transceiver IC for reducing total noise figure in RF front-end of cellular systems

Author

Iwaki, M. ; Tsutsumi, J. ; Ueda, Makoto ; Satoh, Y.

Author_Institution

Microdevice R&D Dept., Taiyo Yuden Co., Ltd., Akashi, Japan

fYear

2014

fDate

3-6 Sept. 2014

Firstpage

73

Lastpage

76

Abstract

The co-design of a SAW duplexer and a low-noise amplifier (LNA) for reducing the total noise figure of the Rx chain in the RF front-end of current multi-band cellular handsets is presented in this paper. The co-design procedure is proposed and one case study for the UMTS Band2 is demonstrated. The key point of the co-design is designing a duplexer and an LNA at the optimum impedance, instead of the standard 50 Ω impedance interface, while taking the matching circuit loss into account. The possibility of reducing the total noise figure is shown in the case study simulation.

Keywords

low noise amplifiers; noise abatement; surface acoustic wave devices; LNA; RF transceiver IC; SAW duplexer codesign procedure; UMTS Band2; cellular systems; low-noise amplifier; matching circuit; multiband cellular handsets; standard impedance interface; CMOS integrated circuits; Impedance; Integrated circuit modeling; Noise figure; Radio frequency; Surface acoustic waves; LNA; SAW; duplexer; noise figure;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium (IUS), 2014 IEEE International

Conference_Location

Chicago, IL

Type

conf

DOI

10.1109/ULTSYM.2014.0019

Filename

6931884