Large-signal modeling of self-heating, collector transit-time, and RF-breakdown effects in power HBTs

Author

Wei, Ce-Jun ; Hwang, James C M ; Ho, Wu-Jing ; HigginS, J. Aiden

Author_Institution

Lehigh Univ., Bethlehem, PA, USA

Volume

44

Issue

12

fYear

1996

fDate

12/1/1996 12:00:00 AM

Firstpage

2641

Lastpage

2647

Abstract

A large-signal heterojunction bipolar transistor (HBT) model has been developed which includes self-heating, collector transit-time, and RF-breakdown effects. The model has a compact form which is based on a compromise between accuracy and utility. As such, the model can be readily extracted and verified with the aid of RF waveform measurements. Using the model in simulations, it was found that RF breakdown was dependent on base biasing and loading conditions. Therefore, with proper circuit design, the maximum output power of the HBT can significantly exceed the limit of open-base breakdown voltage

Keywords

electric breakdown; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor device models; RF waveform measurements; RF-breakdown effects; base biasing; collector transit-time; heterojunction bipolar transistor; large-signal modeling; loading conditions; maximum output power; microwave bipolar transistors; power HBT; self-heating; Circuit simulation; Circuit synthesis; Diodes; Electric breakdown; Heterojunction bipolar transistors; Power generation; Radio frequency; Thermal factors; Thermal resistance; Voltage;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.554615

Filename

554615