Title :
Organic Pseudo-CMOS Circuits for Low-Voltage Large-Gain High-Speed Operation
Author :
Fukuda, Kenji ; Sekitani, Tsuyoshi ; Yokota, Tomoyuki ; Kuribara, Koichi ; Huang, Tingwen ; Sakurai, Takayasu ; Zschieschang, Ute ; Klauk, Hagen ; Ikeda, Makoto ; Kuwabara, H. ; Yamamoto, Takayuki ; Takimiya, Kazuo ; Kwang-Ting Cheng ; Someya, Takao
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Tokyo, Tokyo, Japan
Abstract :
Pseudo-CMOS inverters operating at 2 V and comprising four p-type organic transistors with ultrahigh gain are fabricated using self-assembled monolayer gate dielectrics. The inverter gain is as large as 302 at an operation voltage of 2 V, whereas the minimum operation voltage is as small as 0.5 V. The oscillation frequency of a five-stage ring oscillator comprising pseudo-CMOS inverters is 4.27 kHz at 2 V, corresponding to 23.4 μs of propagation delay per stage. This is the fastest among organic circuits operating at low voltage. Pseudo-CMOS amplifier circuits show a large gain of 240 for a 3.0-mV input voltage.
Keywords :
CMOS integrated circuits; amplifiers; invertors; low-power electronics; oscillators; transistors; frequency 4.27 kHz; low-voltage large-gain high-speed operation; organic pseudo-CMOS circuits; p-type organic transistors; pseudo-CMOS amplifier circuits; pseudo-CMOS inverters; ring oscillator; self-assembled monolayer gate dielectrics; voltage 2 V; Dielectrics; Inverters; Logic gates; Propagation delay; Ring oscillators; Transistors; Tuning; Design for manufacture; logic circuits; organic materials; organic thin-film transistors (TFTs);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2161747
