Title :
Fully electrical 40-Gb/s TDM system prototype based on InP HEMT digital IC technologies
Author :
Yoneyama, Mikio ; Miyamoto, Yutaka ; Otsuji, Taiichi ; Toba, Hiromu ; Yamane, Yasuro ; Ishibashi, Tadao ; Miyazawa, Hiroshi
Author_Institution :
NTT Electron. Corp., Atsugi, Japan
Abstract :
This paper presents a fully electrical 40-Gb/s time-division-multiplexing (TDM) system prototype transmitter and receiver. The input and output interface of the prototype are four-channel 10-Gb/s signals. The prototype can be mounted on a 300-mm-height rack and offers stable 40-Gb/s operation with a single power supply voltage. InP high-electron mobility transistor (HEMT) digital IC´s perform 40-Gb/s multiplexing/demultiplexing and regeneration. In the receiver prototype, unitraveling-carrier photodiode (UTC-PD) generates 1 V/sub pp/ output and directly drives the InP HEMT decision circuit (DEC) without any need for an electronic amplifier. A clock recovery circuit recovers a 40-GHz clock with jitter of 220 fs/sub pp/ from a 40-Gb/s nonreturn-to-zero (NRZ) optical input. The tolerable dispersion range of the prototype within a 1-dB penalty from the receiver sensitivity at zero-dispersion is as wide as 95 ps/nm, and the clock phase margin is wider than 70/spl deg/ over almost all the tolerable dispersion range. A 100-km-long transmission experiment was performed using the prototype. A high receiver sensitivity [-25.1 dBm for NRZ (2/sup 7/-1) pseudorandom binary sequence (PRBS)] was obtained after the transmission. The 40-Gb/s regeneration of the InP DEC suppressed the deviation in sensitivity among output channels to only 0.3 dB. In addition, four-channel 40-Gb/s wavelength-division-multiplexing (WDM) transmission was successfully performed.
Keywords :
HEMT integrated circuits; III-V semiconductors; decision circuits; digital integrated circuits; indium compounds; integrated optoelectronics; jitter; optical fibre dispersion; optical receivers; optical transmitters; sensitivity; synchronisation; telecommunication channels; time division multiplexing; 10 Gbit/s; 100 km; 40 Gbit/s; Gb/s nonreturn-to-zero optical input; InP; InP HEMT decision circuit; InP HEMT digital IC technologies; TDM system prototype receiver; TDM system prototype transmitter; clock recovery circuit; electronic amplifier; four-channel Gb/s signals; fully electrical Gb/s TDM system prototype; jitter; pseudorandom binary sequence; receiver prototype; receiver sensitivity; single power supply voltage; stable Gb/s operation; time-division-multiplexing; tolerable dispersion range; unitraveling-carrier photodiode; wavelength-division-multiplexing; zero-dispersion; Circuits; Clocks; HEMTs; Indium phosphide; Optical receivers; Optical signal processing; Optical transmitters; Prototypes; Time division multiplexing; Wavelength division multiplexing;
Journal_Title :
Lightwave Technology, Journal of