DocumentCode :
1293292
Title :
Low-power embedded SRAM with the current-mode write technique
Author :
Wang, Jinn-Shyan ; Tseng, Wayne ; Li, Hung-Yu
Author_Institution :
Dept. of Electr. Eng., Chung Cheng Inst. of Technol., Taoyuan, Taiwan
Volume :
35
Issue :
1
fYear :
2000
Firstpage :
119
Lastpage :
124
Abstract :
In the traditional current-mode SRAMs, only the read operation is performed in the current mode. In this paper, we propose to use the current-mode technique in both the read and write operations. Due to the current mode operation, voltage swings at bit lines and data lines are kept very small during both read and write. Then, the ac power dissipation of bit lines and data lines, which is proportional to the voltage swing, can be significantly saved. A new current-mode 128/spl times/8 SRAM has been designed based on a 0.6 /spl mu/m CMOS technology, and the new SRAM consumes only 30% of the power of an SRAM with current-mode read but voltage mode write operations. Besides a test chip for the new SRAM, it has also been embedded in an 8-bit 1.1-controller. Experimental results show good agreement with the simulation results and prove the feasibility of the new technique.
Keywords :
CMOS memory circuits; SRAM chips; current-mode circuits; embedded systems; low-power electronics; 0.6 micron; 8 bit; CMOS technology; controller; current-mode write technique; low-power embedded SRAM; CMOS technology; Capacitance; Circuits; Degradation; Power dissipation; Random access memory; Read-write memory; Testing; Very large scale integration; Voltage;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.818929
Filename :
818929
Link To Document :
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