Title : 
Fault simulation in CMOS VLSI circuits
         
        
            Author : 
Zaghloul, M.E. ; Gobovic, D.
         
        
            Author_Institution : 
Dept. of Electr. Eng. & Comput. Sci., George Washington Univ., Washington, DC, USA
         
        
        
        
        
            fDate : 
7/1/1991 12:00:00 AM
         
        
        
        
            Abstract : 
In digital complementary metal-oxide semiconductor (CMOS) very large-scale integration (VLSI) circuits, physical faults, such as transistor stuck-closed, floating line faults and bridging faults (which include gate-to-drain shorts) cause complex analogue behaviour of the digital circuit. Some of these faults create an intermediate voltage level, which classical switch-level fault simulator techniques are unable to interpret. A general fault simulator is proposed which employs a new technique for evaluating the faulty subcircuit based on analysis of a nonlinear resistive circuit. The technique can be considered an extension of classical switch-level level fault simulators, in which most of the possible physical faults are considered.
         
        
            Keywords : 
CMOS integrated circuits; VLSI; circuit analysis computing; digital integrated circuits; fault location; integrated circuit testing; CMOS VLSI circuits; analogue behaviour; bridging faults; faulty subcircuit; floating line faults; gate-to-drain shorts; general fault simulator; intermediate voltage level; nonlinear resistive circuit; physical faults; transistor stuck-closed;
         
        
        
            Journal_Title : 
Computers and Digital Techniques, IEE Proceedings E