• DocumentCode
    1293514
  • Title

    Practical model for low electric field direct-tunnelling current characteristics in nanometer-thick oxide films

  • Author

    Nakatsuji, H. ; Omura, Y.

  • Author_Institution
    Fac. of Eng., Kansai Univ., Osaka, Japan
  • Volume
    35
  • Issue
    23
  • fYear
    1999
  • fDate
    11/11/1999 12:00:00 AM
  • Firstpage
    2016
  • Lastpage
    2018
  • Abstract
    A practical model for direct-tunnelling characteristics at low electric fields in nanometre-thick SiO2 films is proposed. The model allows for the effective increase in the tunnelling barrier width with a quantum-mechanical consideration of the electron density near the Si-SiO2 interface. The simulation results coincide well with experimental results
  • Keywords
    dielectric thin films; electric fields; electron density; semiconductor device models; semiconductor-insulator boundaries; silicon compounds; tunnelling; Si-SiO2; Si/SiO2 interface; SiO2 films; direct-tunnelling current characteristics; electron density; low electric fields; model; nanometer-thick oxide films; quantum-mechanical consideration; tunnelling barrier width;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19991356
  • Filename
    819031
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1293514