Title :
Practical model for low electric field direct-tunnelling current characteristics in nanometer-thick oxide films
Author :
Nakatsuji, H. ; Omura, Y.
Author_Institution :
Fac. of Eng., Kansai Univ., Osaka, Japan
fDate :
11/11/1999 12:00:00 AM
Abstract :
A practical model for direct-tunnelling characteristics at low electric fields in nanometre-thick SiO2 films is proposed. The model allows for the effective increase in the tunnelling barrier width with a quantum-mechanical consideration of the electron density near the Si-SiO2 interface. The simulation results coincide well with experimental results
Keywords :
dielectric thin films; electric fields; electron density; semiconductor device models; semiconductor-insulator boundaries; silicon compounds; tunnelling; Si-SiO2; Si/SiO2 interface; SiO2 films; direct-tunnelling current characteristics; electron density; low electric fields; model; nanometer-thick oxide films; quantum-mechanical consideration; tunnelling barrier width;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991356
