InGaAs/AlGaAs quantum dot DFB lasers operating up to 213°C

Author

Kamp, M. ; Schmitt, M. ; Hofmann, J. ; Schafer, F. ; Reithmaier, J.P. ; Forchel, A.

Author_Institution

Technische Phys., Wurzburg Univ., Germany

Volume

35

Issue

23

fYear

1999

fDate

11/11/1999 12:00:00 AM

Firstpage

2036

Lastpage

2037

Abstract

The authors have investigated complex coupled distributed feedback lasers based on a single layer of InGaAs-AlGaAs self-organised quantum dots grown by molecular beam epitaxy. Metal gratings patterned laterally in a ridge waveguide laser provide feedback for singlemode operation. Threshold currents of 14 mA, differential efficiencies of 0.33 W/A and sidemode suppression ratios of >50 dS have been obtained. Monomode operation was observed for temperatures from 20 to 213°C

Keywords

III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; indium compounds; laser modes; molecular beam epitaxial growth; quantum well lasers; ridge waveguides; self-adjusting systems; semiconductor quantum dots; waveguide lasers; 20 to 213 C; 213 C; InGaAs-AlGaAs; InGaAs-AlGaAs self-organised quantum dots; InGaAs/AlGaAs quantum dot DFB lasers; complex coupled distributed feedback lasers; differential efficiencies; metal gratings; molecular beam epitaxy; monomode operation; ridge waveguide laser; sidemode suppression ratios; single layer; singlemode operation; threshold currents;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19991352

Filename

819045