Author :
Maximov, M.V. ; Shernyakov, Yu.M. ; Kaiander, I.N. ; Bedarev, D.A. ; Eva, E. Yu Kondrat ; Kop, P.S. ; Kovsh, A.R. ; Maleev, N.A. ; Mikhrin, S.S. ; Nikov, A. F Tsatsul ; Ustinov, V.M. ; Volovik, B.V. ; Zhukov, A.E. ; Alferov, Zh.J. ; Ledentsov, N.N. ; Bimb
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
Abstract :
Single transverse mode continuous wave (CW) operation up to 110 mW has been achieved for narrow stripe ridge waveguide laser diodes based on InAsGaAs quantum dots emitting near 1.31 μm. A total output power of 330 mW has been obtained. The maximal modal gain of the ground state transition was measured to be 12 cm-1
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared sources; laser modes; laser transitions; quantum well lasers; ridge waveguides; semiconductor quantum dots; waveguide lasers; 1.3 mum; 330 mW; InAsGaAs; InAsGaAs quantum dots; ground state transition; laser transitions; long wavelength 1.3 μm InAsGaAs quantum dot laser; maximal modal gain; narrow stripe ridge waveguide laser diodes; single transverse mode CW operation; single transverse mode operation; total output power;
