Comparison of Low-Frequency Noise in Channel and Gate-Induced Drain Leakage Currents of High- $k$ nFETs

The random telegraph noise in the gate-induced drain leakage (GIDL) and channel currents of nanoscale high-k nMOSFETs was analyzed and compared systematically. The capture and emission probabilities of the carriers were analyzed in terms of the gate voltage and the temperature. Both emission time (τ_e) and capture time (τ_c) in the channel current have a dependence on V_GS. However, τ_e in the GIDL current is independent of V_GS but strongly dependent on the temperature since τ_e is decreased more significantly with increasing temperature than τ_c. As V_GS increases, τ_c in the GIDL current increases.