DocumentCode :
1293673
Title :
Evaluation of acceleration test for degradation of each layer in stacked amorphous silicon solar cell
Author :
Kojima, T.
Volume :
35
Issue :
23
fYear :
1999
fDate :
11/11/1999 12:00:00 AM
Firstpage :
2057
Lastpage :
2058
Abstract :
The results of an evaluation of the degradation of each separate level and their subsequent recovery process for solar cells made of a three-layer stacked structure are presented. The spectral sensitivity characteristic and conversion efficiency are used as evaluation parameters. The results indicate that the degradation pattern for the bottom layer should be chosen as the standard as far as the evaluation of the overall conversion efficiency is concerned. This is because the absolute value of spectral sensitivity for the bottom layer is the smallest
Keywords :
amorphous semiconductors; elemental semiconductors; life testing; semiconductor device testing; silicon; solar cells; Si; acceleration test; conversion efficiency; layer degradation; recovery; spectral sensitivity; stacked amorphous silicon solar cell;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19991351
Filename :
819058
Link To Document :
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