Title :
Optimized Microcavity and Photonic Crystal Parameters of GaN-Based Ultrathin-Film Light-Emitting Diodes for Highly Directional Beam Profiles
Author :
Lai, Chung-Feng ; Chao, Chia-Hsin ; Yeh, Wen-Yung
Author_Institution :
Electron. & Opto-Electron. Res. Labs., Ind. Technol. Res. Inst., Hsinchu, Taiwan
Abstract :
This study experimentally investigates the highly directional far-field emission distributions of GaN ultrathin-film light-emitting diodes (uTFLEDs) with optimized microcavity thickness and photonic crystal (PhC) parameters. Results show that directionality depends on guided mode extraction behaviors and strong microcavity effects. The proposed GaN PhC uTFLED exhibited an output power extraction efficiency enhancement of 278% ( 3.78) compared to GaN non-PhC uTFLED, and produced a directional far-field emission pattern at half intensity near ±17°.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; magnesium; microcavities; optical films; photonic crystals; silicon; wide band gap semiconductors; GaN-GaN-GaN:Si-InGaN-GaN-AlGaN:Mg-GaN:Mg; directional beam profile; guided mode extraction; highly directional far-field emission distribution; optimized microcavity thickness; photonic crystal parameters; power extraction efficiency enhancement; ultrathin-film light-emitting diode; Chaos; Electroluminescence; Gallium nitride; Lattices; Light emitting diodes; Microcavities; Photonic crystals; Photonics; Power generation; Scanning electron microscopy; Substrates; GaN; light-emitting diodes (LEDs); microcavity; photonic crystals (PhCs);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2010.2066965
