Title :
Charge deposition modeling of thermal neutron products in fast submicron MOS devices
Author :
Zhu, X.W. ; Massengill, L.W. ; Cirba, C.R. ; Barnaby, H.J.
Author_Institution :
Dept. Electr. & Comput. Eng., Vanderbilt Univ., Nashville, TN, USA
Abstract :
Ground-based thermal neutron reaction products (/spl alpha/, /sup 7/Li) appear to be an important terrestrial SEE concern for modern submicron technologies. We address some interesting spatial and temporal characteristics of neutron products. Accurate modeling of the temporal behavior of these products may be required for high-speed devices. In addition, we introduce a simulation methodology that determines device sensitivity to neutron reaction products as a function of neutron nuclear reaction location and the resulting ion track orientation.
Keywords :
MOS integrated circuits; VLSI; circuit simulation; high-speed integrated circuits; integrated circuit modelling; integrated circuit reliability; neutron effects; charge deposition modeling; device sensitivity; fast submicron MOS devices; high-speed devices; ion track orientation; neutron nuclear reaction location; reliability; simulation methodology; spatial characteristics; temporal characteristics; terrestrial SEE concern; thermal neutron products; Alpha particles; Boron; Circuits; Delay; MOS devices; Neutrons; Particle tracking; Silicon; Space technology; USA Councils;
Journal_Title :
Nuclear Science, IEEE Transactions on
