Title :
Single event burnout sensitivity of embedded field effect transistors
Author :
Koga, R. ; Crain, S.H. ; Crawford, K.B. ; Yu, P. ; Gordon, M.J.
Author_Institution :
Aerosp. Corp., El Segundo, CA, USA
Abstract :
Observations of single event burnout (SEB) in embedded field effect transistors are reported. Both SEB and other single event effects are presented for several pulse width modulation and high frequency devices. The microscope has been employed to locate and to investigate the damaged areas. A model of the damage mechanism based on the results so obtained is described.
Keywords :
ion beam effects; power MOSFET; pulse width modulation; HEXFET; embedded field effect transistor; heavy ion irradiation; high frequency device; power MOSFET; pulse width modulation; single event burnout; BiCMOS integrated circuits; Clocks; FETs; MOSFETs; Pulse circuits; Pulse width modulation; Single event upset; Space vector pulse width modulation; User-generated content; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
