Title :
On the role of energy deposition in triggering SEGR in power MOSFETs
Author :
Selva, Luis E. ; Swift, Gary M. ; Taylor, William A. ; Edmonds, Larry D.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
Single event gate rupture (SEGR) was studied using three types of power MOSFET devices with ions having incident linear energy transfers (LETs) in silicon from 26 to 82 MeV/spl middot/cm/sup 2//mg. Results are: (1) consistent with Wrobel´s oxide breakdown for V/sub DS/=0 volts (for both normal incidence and angle); and (2) when V/sub GS/=0 volts, energy deposited near the Si/SiO/sub 2/ interface is more important than the energy deposited deeper in the epi.
Keywords :
ion beam effects; power MOSFET; semiconductor device breakdown; semiconductor device reliability; SEGR; Si-SiO/sub 2/; Wrobel´s oxide breakdown; energetic heavy ions; energy deposition; incident linear energy transfers; power MOSFETs; single event gate rupture; Dielectric substrates; Electric breakdown; Epitaxial layers; Laboratories; MOSFETs; Propulsion; Silicon; Space technology; Testing; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
