• DocumentCode
    1293856
  • Title

    On the figure of merit model for SEU rate calculations

  • Author

    Bar, J. ; Reed, R.A. ; LaBel, Kenneth A.

  • Author_Institution
    NASA Goddard Space Flight Center, Greenbelt, MD, USA
  • Volume
    46
  • Issue
    6
  • fYear
    1999
  • Firstpage
    1504
  • Lastpage
    1510
  • Abstract
    Petersen has introduced a one parameter characterization of a device by the Figure Of Merit (FOM). It was claimed that this parameter was sufficient to estimate the SEU rate in almost all orbits. The present paper presents an analytic study of the FOM concept and compares the FOM model with other empirical models. It is found that indeed the FOM parameter gives, in most cases, a good agreement with the rates found using the full SEU cross section plots of the devices. The agreement is poorer in cases where a high portion of the proton flux comes from low energy protons and for very SEU-hard devices. This is demonstrated for certain devices (FPGAs) where the FOM predicted by proton may be smaller by an order of magnitude than the FOM from heavy ions.
  • Keywords
    field programmable gate arrays; neutron effects; proton effects; FPGA device; SEU cross-section; figure of merit model; heavy ion irradiation; proton irradiation; single event upset rate; Energy exchange; Extraterrestrial measurements; Field programmable gate arrays; Geometry; Magneto electrical resistivity imaging technique; NASA; Orbital calculations; Orbits; Protons; Single event upset;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.819114
  • Filename
    819114