Title :
Study of dose effects on IGBT-type devices subjected to gamma irradiation
Author :
Marceau, M. ; Brisset, C. ; da Costa, M.
Author_Institution :
CEA, Centre d´´Etudes Nucleaires de Saclay, Gif-sur-Yvette, France
Abstract :
This document describes the characterization tests performed on an IGBT transistor, International Rectifier model IRGP450UD2. It also provides an analysis of IGBT behavior, using an electrical model and a PSPICE simulator.
Keywords :
SPICE; gamma-ray effects; insulated gate bipolar transistors; radiation hardening (electronics); semiconductor device models; semiconductor device testing; IGBT transistor; IGBT-type devices; International Rectifier model IRGP450UD2; PSPICE simulator; characterization tests; dose effects; electrical model; gamma irradiation; Bipolar integrated circuits; Circuit testing; Gamma rays; Insulated gate bipolar transistors; MOSFET circuits; Neutrons; Performance evaluation; Power system modeling; Radiation hardening; Rectifiers;
Journal_Title :
Nuclear Science, IEEE Transactions on
