DocumentCode
1294069
Title
A system for radiation damage monitoring
Author
Rosenfeld, A.B. ; Reinhard, M.I. ; Marinaro, D. ; Ihnat, P. ; Taylor, G. ; Pea, L. ; Freeman, N. ; Alexiev, D. ; Lerch, M.
Author_Institution
Radiat. Phys. Group, Wollongong Univ., NSW, Australia
Volume
46
Issue
6
fYear
1999
Firstpage
1766
Lastpage
1773
Abstract
An automatic radiation damage monitoring system has been developed and tested. The system is based on two passive sensors for the measurement of integral ionizing and non-ionizing energy losses in silicon devices. Ionizing dose is measured in terms of dose in SiO/sub 2/ and displacement damage in terms of 1 MeV(Si) equivalent neutron fluence. The system uses MOSFETs and PIN dosimetric diodes.
Keywords
MOSFET; elemental semiconductors; p-i-n diodes; radiation effects; semiconductor device testing; silicon; MOSFETs; PIN dosimetric diodes; Si; displacement damage; equivalent neutron fluence; ionizing dose; ionizing energy losses; nonionizing energy losses; passive sensors; radiation damage monitoring; Automatic testing; Computerized monitoring; Energy loss; Energy measurement; Ionizing radiation sensors; Loss measurement; Radiation monitoring; Sensor systems; Silicon devices; System testing;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.819152
Filename
819152
Link To Document