Title :
Proton degradation of light-emitting diodes
Author :
Johnston, A.H. ; Rax, B.G. ; Selva, L.E. ; Barnes, C.E.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
Proton degradation is investigated for several types of light-emitting diodes with wavelengths in the near infrared region. Several basic light-emitting diode (LED) technologies are compared, including homojunction and double-heterojunction devices. Homojunction LEDs fabricated with amphoteric dopants are far more sensitive to displacement damage than double-heterojunction LEDs, and are strongly affected by injection-enhanced annealing. Unit-to-unit variability remains an important issue for all LED technologies. For technologies, degradation of the forward voltage characteristics appears to be more significant than degradation of light output.
Keywords :
annealing; light emitting diodes; proton effects; amphoteric dopant diffusion; displacement damage; double heterojunction device; homojunction device; injection-enhanced annealing; light emitting diode; near infrared emission; proton irradiation; Degradation; Epitaxial growth; Gallium arsenide; Impurities; Laboratories; Light emitting diodes; Propulsion; Protons; Space technology; Temperature;
Journal_Title :
Nuclear Science, IEEE Transactions on
