Comparison of lifetime and threshold current damage factors for multi-quantum-well (MQW) GaAs/GaAlAs laser diodes irradiated at different proton energies

Author

Lee, S.C. ; Zhao, Yaoyao Fiona ; Schrimpf, R.D. ; Neifeld, M.A. ; Galloway, K.F.

Author_Institution

Dept. of Electr. & Comput. Eng., Vanderbilt Univ., Nashville, TN, USA

Volume

46

Issue

6

fYear

1999

Firstpage

1797

Lastpage

1803

Abstract

Proton damage effects on multi-quantum-well (MQW) GaAs/GaAlAs laser diodes are studied using both current vs, voltage (I-V) and optical power vs. current (L-I) characteristics. The lifetime damage factor is calculated from I-V characteristics and compared with the commonly used threshold current damage factor from L-I characteristics. The lifetime damage factor is larger than the threshold current damage factor. This difference is explained by the different values of radiative lifetime when measuring the damage factors in the different operating regions. The two damage factors are compared at proton energies from 70 MeV to 200 MeV.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; proton effects; quantum well lasers; 70 to 200 MeV; 780 nm; GaAs-GaAlAs; I-V characteristics; L-I characteristics; MQW laser diodes; lifetime damage factor; multi-quantum-well laser diodes; optical power versus current characteristics; proton damage effects; radiative lifetime; threshold current damage factor; Degradation; Diode lasers; Gallium arsenide; Power engineering and energy; Power engineering computing; Protons; Quantum well devices; Quantum well lasers; Threshold current; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.819156

Filename

819156