Low-voltage organic transistors for flexible electronics

Author

Zschieschang, Ute ; Rodel, Reinhold ; Kraft, Ulrike ; Takimiya, Kazuo ; Zaki, Tarek ; Letzkus, Florian ; Butschke, Jorg ; Richter, H. ; Burghartz, Joachim N. ; Wei Xiong ; Murmann, Boris ; Klauk, Hagen

Author_Institution

Max Planck Inst. for Solid State Res., Stuttgart, Germany

fYear

2014

fDate

24-28 March 2014

Firstpage

1

Lastpage

6

Abstract

A process for the fabrication of bottom-gate, top-contact (inverted staggered) organic thin-film transistors (TFTs) with channel lengths as short as 1 μm on flexible plastic substrates has been developed. The TFTs employ vacuum-deposited small-molecule semiconductors and a low-temperature-processed gate dielectric that is sufficiently thin to allow the TFTs to operate with voltages of about 3 V. The p-channel TFTs have an effective field-effect mobility of about 1 cm²/Vs, an on/off ratio of 10⁷, and a signal propagation delay (measured in 11-stage ring oscillators) of 300 ns per stage. For the n-channel TFTs, an effective field-effect mobility of about 0.06 cm²/Vs, an on/off ratio of 10⁶, and a signal propagation delay of 17 μs per stage have been obtained.

Keywords

flexible electronics; low-temperature techniques; organic field effect transistors; thin film transistors; vacuum deposition; TFTs; bottom-gate top-contact organic thin-film transistors; effective field-effect mobility; flexible electronics; flexible plastic substrates; low-temperature-processed gate dielectric; low-voltage organic transistors; signal propagation delay; vacuum-deposited small-molecule semiconductors; Logic gates; Plastics; Semiconductor device measurement; Substrates; Thin film transistors; Transconductance; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Design, Automation and Test in Europe Conference and Exhibition (DATE), 2014

Conference_Location

Dresden

Type

conf

DOI

10.7873/DATE.2014.318

Filename

6800519