DocumentCode :
1294652
Title :
ISFET based chemical gilbert cell
Author :
Kalofonou, Melpomeni ; Toumazou, Christofer
Author_Institution :
Dept. of Electr. & Electron. Eng., Imperial Coll. London, London, UK
Volume :
47
Issue :
16
fYear :
2011
Firstpage :
903
Lastpage :
904
Abstract :
An ion-sensitive field effect transistor (ISFET) based chemical Gilbert cell is presented, capable of differential measurement of pH signals during thermocycling reactions. The proposed circuit is capable of measuring the difference between two reaction chambers allowing stable drift reduction. Implemented in a typical 0.35 μm CMOS process, the resulting topology has a tunable gain of up to 40 dB, is temperature stable, with a variation of just 0.7% within the range of 0 to 100°C and achieves a low power consumption of 198 nW.
Keywords :
CMOS integrated circuits; field effect transistors; low-power electronics; pH measurement; CMOS; ISFET; chemical Gilbert cell; differential measurement; gain 40 dB; ion-sensitive field effect transistor; low power consumption; pH signals; power 198 nW; size 0.35 mum; temperature 100 C; thermocycling reactions;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2011.1946
Filename :
5980022
Link To Document :
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