Title :
Use of vacuum tubes in test instrumentation for measuring characteristics of fast high-voltage semiconductor devices
Author_Institution :
Electron Devices Div., NBS, Washington, DC, USA
Abstract :
Circuits are described that permit measurement of fast events occurring in power semiconductors. These circuits were developed for the dynamic characterization of transistors used in inductive-load switching applications. Fast voltage clamping using vacuum diodes is discussed, and reference is made to a unique circuit that was built for performing nondestructive, reverse-bias, second-breakdown tests on transistors.
Keywords :
bipolar transistors; diodes; nondestructive testing; power transistors; semiconductor device testing; semiconductor switches; inductive-load switching; nondestructive, reverse-bias, second-breakdown tests; power semiconductors; transistors; vacuum diodes; voltage clamping; Clamps; Current measurement; Electric breakdown; Electron tubes; Semiconductor device measurement; Transistors; Voltage measurement;
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
DOI :
10.1109/TIM.1981.6312384
