DocumentCode
1294743
Title
Nanodiamond lateral field emission vacuum logic OR gate
Author
Ghosh, Nirnay ; Kang, W.P. ; Davidson, Jennifer L.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA
Volume
47
Issue
16
fYear
2011
Firstpage
926
Lastpage
927
Abstract
Reported are fabrication and characterisation of a novel vacuum logic OR gate using two identical nanodiamond lateral field emission diodes fabricated on silicon-on-insulator wafers. Each diode consists of 9000 finger-like emitters with 4 m interelectrode spacing. High and stable emission current with low turn-on field have been observed and verified by a Fowler-Nordheim plot for each structure. Diode-resistor logic is used to realise the logic OR function. This nanodiamond vacuum logic gate is very promising for application in harsh environments.
Keywords
diamond; logic gates; nanoelectronics; resistors; semiconductor diodes; silicon-on-insulator; vacuum microelectronics; Fowler-Nordheim plot; diode-resistor logic; emission current; fabrication; finger-like emitter; interelectrode spacing; low turn-on field; nanodiamond lateral field emission diode; nanodiamond vacuum logic gate; silicon-on-insulator wafer; vacuum logic OR gate;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2011.1586
Filename
5980037
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