• DocumentCode
    1294769
  • Title

    Large-area solar-blind AlGaN-based MSM photodetectors with ultra-low dark current

  • Author

    Xie, Fei ; Lu, Hai-Han ; Chen, Degang J. ; Han, P. ; Zhang, Rongting ; Zheng, You Dou ; Li, Luoqing ; Jiang, W.H. ; Chen, Ci

  • Author_Institution
    Jiangsu Provincial Key Lab. of Adv. Photonic & Electron. Mater., Nanjing Univ., Nanjing, China
  • Volume
    47
  • Issue
    16
  • fYear
    2011
  • Firstpage
    930
  • Lastpage
    931
  • Abstract
    Large-area metal-semiconductor-metal (MSM) solar-blind photodetectors with a device area of 5-5-mm2 have been fabricated on Al0.4Ga0.6N/AlN/sapphire epistructure. The photodetector exhibits ultra-low dark current density of 3.2×10-12 A/cm2 under 20 V bias and a corresponding breakdown voltage of up to 385 V. The solar-blind/ultraviolet rejection ratio of the photodetector is more than four orders of magnitude with a maximum quantum efficiency of 28 at 275 nm.
  • Keywords
    III-V semiconductors; aluminium compounds; current density; gallium compounds; photodetectors; wide band gap semiconductors; AlGaN-AlN; C; MSM photodetectors; efficiency 28 percent; large-area metal-semiconductor-metal solar-blind photodetectors; sapphire epistructure; solar-blind-ultraviolet rejection ratio; ultra-low dark current density; voltage 20 V; wavelength 275 nm;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2011.1695
  • Filename
    5980040
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1294769