Title :
Generalised Berglund relation in LDMOS transistors
Author :
Yao, Wei ; Gildenblat, Gennady ; McAndrew, Colin C. ; Cassagnes, A.
Author_Institution :
Sch. of Electr., Comput. & Energy Eng., Arizona State Univ., Tempe, AZ, USA
Abstract :
Berglund related a certain area associated with the normalised MOS C(V) curve to the energy gap of silicon. Despite the fact that in LDMOS transistors the gate capacitance exhibits complicated behaviour associated with the presence of the drift region, it turns out that the Berglund relation remains valid, as confirmed by both measurements and simulations.
Keywords :
MOSFET; LDMOS transistors; Si; drift region; energy gap; gate capacitance; generalised Berglund relation; normalised MOS curve;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2011.1954
