X-band RF MEMS phase shifters for phased array applications

Author

Malczewski, A. ; Eshelman, S. ; Pillans, B. ; Ehmke, J. ; Goldsmith, C.L.

Author_Institution

Raytheon Syst. Co., Dallas, TX, USA

Volume

9

Issue

12

fYear

1999

fDate

12/1/1999 12:00:00 AM

Firstpage

517

Lastpage

519

Abstract

In this work, development of a low-loss radio frequency (RF) microelectromechanical (MEMS) 4-bit X-band monolithic phase shifter is presented. These microstrip circuits are fabricated on 0.021-in-thick high-resistivity silicon and are based on a reflection topology using 3-dB Lange couplers. The average insertion loss of the circuit is 1.4 dB with the return loss >11 dB at 8 GHz. To the best of our knowledge, this is a lowest reported loss for X-band phase shifter and promises to greatly reduce the cost of designing and building phase arrays

Keywords

antenna accessories; antenna phased arrays; losses; micromechanical devices; microstrip circuits; microwave antenna arrays; microwave phase shifters; microwave switches; silicon; 0.021 in; 1.4 dB; 11 dB; 8 GHz; Lange couplers; MEMS phase shifters; MEMS switches; SHF; Si; X-band; high-resistivity Si substrate; insertion loss; low-loss phase shifter; microelectromechanical phase shifter; microstrip circuits; phased array applications; reflection topology; return loss; Circuit topology; Couplers; Micromechanical devices; Microstrip; Phase shifters; Phased arrays; Radio frequency; Radiofrequency microelectromechanical systems; Reflection; Silicon;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.819417

Filename

819417