Title :
A single-chip coplanar 0.8-μm GaAs MESFET K/Ka-band DRO
Author :
Keller, M.G. ; Freundorfer, A.P. ; Antar, Y.M.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Queen´´s Univ., Kingston, Ont., Canada
fDate :
12/1/1999 12:00:00 AM
Abstract :
The authors describe the design and measured results of a monolithic coplanar (CP) transmission line-based GaAs MESFET dielectric resonator oscillator (DRO) for K/Ka-band applications. The dielectric resonator (DR) is on chip. The measured output power was 11 dBm at 26.17 GHz for a conversion efficiency of 5.5%. The chip probed phase noise was -118.7 dBc at 1 MHz off carrier. This represents the first reported instance of a DRO being fabricated using a CP transmission line topology
Keywords :
III-V semiconductors; MESFET integrated circuits; MMIC oscillators; coplanar transmission lines; dielectric resonator oscillators; field effect MIMIC; field effect MMIC; gallium arsenide; integrated circuit design; integrated circuit noise; millimetre wave oscillators; phase noise; 26.17 GHz; 5.5 percent; CP transmission line topology; GaAs; GaAs MESFET DRO; K-band; Ka-band; coplanar transmission line; dielectric resonator oscillator; monolithic type; phase noise; single-chip coplanar DRO; Dielectric measurements; Gallium arsenide; MESFETs; Oscillators; Phase noise; Power generation; Power measurement; Power transmission lines; Semiconductor device measurement; Transmission line measurements;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
