Title :
An integrated PIN/MISS OEIC for high current photoreceiver applications
Author :
Fang, Y.K. ; Lee, Kun-Hsien ; Wu, Kun-Hsien ; Tsao, Chung-Yang
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
1/1/1997 12:00:00 AM
Abstract :
A new PIN/MISS photoreceiver with very high output current has been developed by using the combination of an amorphous silicon germanium alloy PIN photodiode and a metal-insulator-semiconductor switch (MISS) device. The developed photoreceiver uses a PIN photodiode as the light absorption structure and light wavelength selector and the MISS device as an actuator to drive an electronic load. Based on the experimental results, the photoreceiver yields a very high output current of 3.2 mA at a voltage bias of 6 V under an incident light power of Pin=100 μW, and has a rise time of 465 μs with a load resistance of R=1 kΩ. The peak response wavelength of the PIN photodiode is at 905 nm, i.e., infrared light. Thus the high output current PIN/MISS photoreceiver is a good candidate for some specific applications
Keywords :
Ge-Si alloys; MIS devices; integrated optoelectronics; optical fibre communication; optical receivers; p-i-n photodiodes; semiconductor materials; semiconductor switches; 100 muW; 3.2 mA; 465 mus; 6 V; 905 nm; SiGe:H; incident light power; integrated PIN/MISS OEIC; light absorption structure; light wavelength selector; load resistance; metal-insulator-semiconductor switch; output current; peak response wavelength; photoreceiver applications; Amorphous silicon; FETs; Fabrication; Germanium alloys; HEMTs; MODFET circuits; Optoelectronic devices; PIN photodiodes; Switches; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
