• DocumentCode
    1295156
  • Title

    15-μm 128×128 GaAs/AlxGa1-xAs quantum well infrared photodetector focal plane array camera

  • Author

    Gunapala, Sarath D. ; Park, Jin S. ; Sarusi, Gabby ; Lin, True-Lon ; Liu, John K. ; Maker, Paul D. ; Muller, Richard E. ; Shott, Craig A. ; Hoelter, Ted

  • Author_Institution
    Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
  • Volume
    44
  • Issue
    1
  • fYear
    1997
  • fDate
    1/1/1997 12:00:00 AM
  • Firstpage
    45
  • Lastpage
    50
  • Abstract
    In this paper, we discuss the development of very sensitive, very long wavelength infrared GaAs/AlxGa1-xAs quantum well infrared photodetectors (QWIPs) based on bound-to-quasi-bound intersubband transition, fabrication of random reflectors for efficient light coupling, and the demonstration of a 15-μm cutoff 128×128 focal plane array imaging camera. Excellent imagery, with a noise equivalent differential temperature (NEΔT) of 30 mK has been achieved
  • Keywords
    III-V semiconductors; aluminium compounds; focal planes; gallium arsenide; infrared detectors; infrared imaging; semiconductor quantum wells; 128 pixel; 15 micron; 16384 pixel; GaAs-AlGaAs; bound-to-quasi-bound intersubband transition; focal plane array camera; imaging camera; infrared photodetector; light coupling; noise equivalent differential temperature; random reflectors; Dark current; Gallium arsenide; Infrared imaging; Laboratories; Photodetectors; Propulsion; Space technology; Temperature; Thermionic emission; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.554790
  • Filename
    554790
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1295156