DocumentCode
1295163
Title
9-μm cutoff 256×256 GaAs/AlxGa1-xAs quantum well infrared photodetector hand-held camera
Author
Gunapala, Sarath D. ; Liu, John K. ; Park, Jin S. ; Sundaram, Mani ; Shott, Craig A. ; Hoelter, Ted ; Lin, True-Lon ; Massie, S.T. ; Maker, Paul D. ; Muller, Richard E. ; Sarusi, Gabby
Author_Institution
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Volume
44
Issue
1
fYear
1997
fDate
1/1/1997 12:00:00 AM
Firstpage
51
Lastpage
57
Abstract
A 9-μm cutoff 256×256 hand-held quantum well infrared photodetector (QWIP) camera has been demonstrated. Excellent imagery, with a noise equivalent differential temperature (NEΔT) of 26 mK has been achieved. In this paper, we discuss the development of this very sensitive long wavelength infrared (LWIR) camera based on a GaAs/AlGaAs QWIP focal plane array and its performance in quantum efficiency, NEΔT, minimum resolvable temperature (MRTD), uniformity, and operability
Keywords
III-V semiconductors; aluminium compounds; focal planes; gallium arsenide; infrared detectors; infrared imaging; semiconductor quantum wells; 256 pixel; 65536 pixel; GaAs-AlGaAs; QWIP focal plane array; hand-held camera; infrared photodetector; long wavelength infrared camera; minimum resolvable temperature; noise equivalent differential temperature; operability; quantum efficiency; quantum well; uniformity; Dark current; Detectors; Gallium arsenide; Land surface temperature; Molecular beam epitaxial growth; Photodetectors; Quantum well devices; Stationary state; Testing; Thermionic emission;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.554791
Filename
554791
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