Title :
9-μm cutoff 256×256 GaAs/AlxGa1-xAs quantum well infrared photodetector hand-held camera
Author :
Gunapala, Sarath D. ; Liu, John K. ; Park, Jin S. ; Sundaram, Mani ; Shott, Craig A. ; Hoelter, Ted ; Lin, True-Lon ; Massie, S.T. ; Maker, Paul D. ; Muller, Richard E. ; Sarusi, Gabby
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fDate :
1/1/1997 12:00:00 AM
Abstract :
A 9-μm cutoff 256×256 hand-held quantum well infrared photodetector (QWIP) camera has been demonstrated. Excellent imagery, with a noise equivalent differential temperature (NEΔT) of 26 mK has been achieved. In this paper, we discuss the development of this very sensitive long wavelength infrared (LWIR) camera based on a GaAs/AlGaAs QWIP focal plane array and its performance in quantum efficiency, NEΔT, minimum resolvable temperature (MRTD), uniformity, and operability
Keywords :
III-V semiconductors; aluminium compounds; focal planes; gallium arsenide; infrared detectors; infrared imaging; semiconductor quantum wells; 256 pixel; 65536 pixel; GaAs-AlGaAs; QWIP focal plane array; hand-held camera; infrared photodetector; long wavelength infrared camera; minimum resolvable temperature; noise equivalent differential temperature; operability; quantum efficiency; quantum well; uniformity; Dark current; Detectors; Gallium arsenide; Land surface temperature; Molecular beam epitaxial growth; Photodetectors; Quantum well devices; Stationary state; Testing; Thermionic emission;
Journal_Title :
Electron Devices, IEEE Transactions on
