Title :
Investigation of Si/SiGe-based FET geometries for high frequency performance by computer simulation
Author :
Neill, Anthony G O ; Antoniadis, Dimitri A.
Author_Institution :
Microsystems Technol. Lab., MIT, Cambridge, MA, USA
fDate :
1/1/1997 12:00:00 AM
Abstract :
The high frequency performance of n-channel Si/SiGe-based FETs is investigated by computer simulation. Using a two-dimensional hydrodynamic model, devices having gate lengths down to 0.1 μm are examined. Self-aligned heterojunction MOSFETs are found to offer the best performance in terms of cut-off frequency and available voltage gain. Schottky gate heterojunction FETs have the highest transconductance in this study, but simulations confirm that this is because of the close proximity of the channel to the gate. Depletion mode MOS gate devices are also considered and a large parameter space is explored
Keywords :
Ge-Si alloys; MOSFET; Schottky gate field effect transistors; digital simulation; elemental semiconductors; microwave field effect transistors; semiconductor device models; semiconductor materials; silicon; 0.1 micron; FET geometries; Schottky gate heterojunction FET; Si-SiGe; available voltage gain; computer simulation; cut-off frequency; depletion mode MOS gate devices; gate lengths; high frequency performance; microwave FETs; transconductance; two-dimensional hydrodynamic model; Computer simulation; Cutoff frequency; FETs; Geometry; Heterojunctions; Hydrodynamics; MOSFETs; Performance gain; Transconductance; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
