Subthreshold analysis of an MOS analog switch

Author

Aghtar, Saeed ; Haslett, J.W. ; Trofimenkoff, F.N.

Author_Institution

Dept. of Electr. & Comput. Eng., Calgary Univ., Alta., Canada

Volume

44

Issue

1

fYear

1997

fDate

1/1/1997 12:00:00 AM

Firstpage

89

Lastpage

96

Abstract

Charge injection error in the presence of subthreshold effects has been analyzed. It is confirmed that the subthreshold effect is significant at low voltage falling rates. A simplified model is derived using an appropriate approximation. Predictions are compared to the results of a SPICE simulation, a nonquasi-static (NQS) model simulation and experimental results. Excellent agreement between the modified and NQS model and recently published experimental results was obtained. This analytical model is computationally efficient compared to the SPICE and NQS models and provides physical insight into the switching errors

Keywords

MOS analogue integrated circuits; SPICE; circuit analysis computing; integrated circuit modelling; switching circuits; MOS analog switch; SPICE simulation; charge injection error; nonquasi-static model simulation; subthreshold analysis; switching errors; voltage falling rates; Analytical models; Capacitance; Computational modeling; Instruments; Low voltage; Physics computing; Predictive models; SPICE; Switches; Switching circuits;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.554798

Filename

554798