• DocumentCode
    1295460
  • Title

    Fabrication of two-point-supported annular microresonators with vertical transducer gaps

  • Author

    Murakami, Shinsuke ; Konno, Masayuki ; Ikehara, T. ; Maeda, Ryutaro ; Mihara, Teruyoshi

  • Author_Institution
    Res. Centre for Ubiquitous MEMS & Micro Eng., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan
  • Volume
    6
  • Issue
    7
  • fYear
    2011
  • fDate
    7/1/2011 12:00:00 AM
  • Firstpage
    469
  • Lastpage
    472
  • Abstract
    Disc microresonators employing in-plane resonant modes are promising candidates as functional elements for high-sensitive mass sensing applications because they provide a high quality factor (Q) in air for the reduced air-damping effect. Furthermore, it has been reported that a disc resonator supported at fewer nodal points exhibited a higher Q. The authors have designed and fabricated two-point-supported annular micromechanical resonators employing the in-plane resonant modes, which shows two nodal points on the outer circumference, with an inner-to-outer radius ratio of 0.17. The beam structures to support the resonator were newly designed and connected to the two nodal points expected for a specified in-plane resonant mode to decrease the energy loss of the vibration through the supporting structures. The resonator was electrostatically driven and detected with 150 nm-wide vertical transducer gaps that were fabricated by trench etching of the single-crystal silicon using deep reactive ion etching with a resist mask patterned by electron beam lithography. The fabricated resonators show a resonant peak at 50.1 MHz with a Q of 3000 in air. The measured peak resonant frequency agreed well with the frequency predicted by finite-element simulations.
  • Keywords
    Q-factor; electron beam lithography; elemental semiconductors; micromechanical resonators; silicon; sputter etching; beam structures; deep reactive ion etching; disc microresonators; disc resonator; electron beam lithography; high-sensitive mass sensing applications; in-plane resonant modes; micromechanical resonators; quality factor; reduced air-damping effect; resist mask; single-crystal silicon; size 150 nm; trench etching; two-point-supported annular microresonators; vertical transducer gaps;
  • fLanguage
    English
  • Journal_Title
    Micro & Nano Letters, IET
  • Publisher
    iet
  • ISSN
    1750-0443
  • Type

    jour

  • DOI
    10.1049/mnl.2011.0097
  • Filename
    5981645