Title :
Characterisation of a suspended nanowire channel thin-film transistor with sub-100 nm air gap
Author :
Chia-Hao Kuo ; Chia-Wei Hsu ; Horng-Chih Lin ; Tiao-Yuan Huang
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
7/1/2011 12:00:00 AM
Abstract :
A novel suspended nanowire (NW) channel thin-film transistor (TFT) with sub-100 nm air gap has been fabricated and characterised. With a simple and low-cost over-etching-time-controlled reactive ion etching technique and a buffered-oxide etch wet-etching process, a suspended NW of 27 nm and an air gap of 10 nm were achieved. The resultant suspended-NW-channel TFTs showed an ultra-low subthreshold swing (52 mV/dec) and considerable hysteresis window (3.7 V). Finally, the impacts of device dimensions on the characteristics of suspended NW TFTs were also investigated.
Keywords :
elemental semiconductors; nanoelectronics; nanofabrication; nanowires; semiconductor thin films; silicon; sputter etching; thin film transistors; Si; TFT; air gap; buffered-oxide etch wet-etching; device dimensions; hysteresis; over-etching-time-controlled reactive ion etching; size 27 nm; suspended nanowire channel thin-film transistor; ultralow subthreshold swing;
Journal_Title :
Micro & Nano Letters, IET
DOI :
10.1049/mnl.2011.0090