Aging time dependence of catastrophic optical damage (COD) failure of a 0.98-μm GaInAs-GaInP strained quantum-well laser

Author

Hashimoto, Jun-ichi ; Yoshida, Ichiro ; Murata, Michio ; Katsuyama, Tsukuru

Author_Institution

Optoelectron. R&D Labs., Sumitomo Electr. Ind. Ltd., Yokohama, Japan

Volume

33

Issue

1

fYear

1997

fDate

1/1/1997 12:00:00 AM

Firstpage

66

Lastpage

70

Abstract

In this paper, we studied the aging time dependence of the catastrophic optical damage (COD) failure of an Al-free uncoated 0.98-μm GaInAs-GaInP strained quantum-well laser with an injection current as a parameter. Based on the stress-strength model, we first investigated experimentally the dependence of the critical power level (CPL) at which COD would take place upon the aging time. Then applying a statistical treatment to this result, we found for the first time that CPL data at each aging time could be considered to distribute according to the Weibull statistics, and the decrease rate of the CPL with the aging time depended very strongly on the injection current. Finally, using the relationship between the decrease rate of the CPL with the aging time and the current, we predicted roughly the time of a COD failure occurrence for both large and small current cases. As a result, we clarified that for our Al-free uncoated 0.98-μm laser, a COD failure became a fatal problem in the case of a large-current (high-power) operation

Keywords

III-V semiconductors; ageing; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser transitions; quantum well lasers; semiconductor device models; semiconductor device reliability; statistical analysis; μm GaInAs-GaInP strained quantum-well laser; 0.98 mum; Al-free uncoated μm GaInAs-GaInP strained quantum-well laser; GaInAs-GaInP; Weibull statistics; aging time dependence; catastrophic optical damage failure; critical power level; injection current; large-current high-power operation; statistical treatment; stress-strength model; Aging; Fiber lasers; Laser modes; Laser stability; Laser theory; Materials reliability; Quantum well lasers; Reliability theory; Semiconductor device reliability; Semiconductor lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.554891

Filename

554891