A Novel SONOS Gate Power MOSFET With Excellent UIS Capability

Author

Xianda Zhou ; Ng, J.C.W. ; Sin, Johnny K. O.

Author_Institution

Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China

Volume

32

Issue

10

fYear

2011

Firstpage

1415

Lastpage

1417

Abstract

A novel silicon-oxide-nitride-oxide-silicon gate power MOSFET is proposed and experimentally demonstrated. In the novel device, the doping concentration of the p-body is increased by an order of magnitude compared to that of the conventional power MOSFET. However, the positive shift of the threshold voltage due to the heavily doped p-body is fully compensated by the positive fixed charges preprogrammed in the silicon nitride of the oxide-nitride-oxide gate dielectric. As a result, a normal threshold voltage can be obtained, and the avalanche energy absorption of the novel device at unclamped inductive switching is 5.2 times that of the conventional power MOSFET.

Keywords

power MOSFET; semiconductor doping; silicon compounds; SONOS gate power MOSFET; Si₃N₄; UIS capability; avalanche energy absorption; doping concentration; heavily doped p-body; oxide-nitride-oxide gate dielectric; positive fixed charge; silicon-oxide-nitride-oxide-silicon gate power MOSFET; threshold voltage positive shift; undamped inductive switching capability; Logic gates; Power MOSFET; SONOS devices; Silicon; Temperature measurement; Threshold voltage; Avalanche energy; power MOSFET; silicon–oxide–nitride–oxide–silicon (SONOS); threshold voltage; unclamped inductive switching (UIS);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2158059

Filename

5982080