Title :
High frequency GaN-based pulse generator with active T/R switch circuit
Author :
Boni, Enrico ; Bassi, L. ; Cellai, Andrea
Author_Institution :
Dipt. di Ing. dell´Inf., Univ. di Firenze, Florence, Italy
Abstract :
High frequency ultrasound systems capable of high spatial resolution are commonly used for small biological structures imaging and non-destructive testing. For transducers operating around 50MHz central frequency, excitation pulses with amplitude of several tens of Volts and 100V/ns slew rate are needed. Different solutions have been proposed to isolate the receive Low Noise Amplifier (LNA) from the transmission signal (T/R switch). This paper proposes a high frequency transmit (TX) circuit with a T/R switch capable of overcoming the typical limitations of previous solutions.
Keywords :
III-V semiconductors; acoustic noise; amplifiers; gallium compounds; pulse generators; switches; ultrasonic transducers; wide band gap semiconductors; active T-R switch circuit; biological structures imaging; excitation pulses; frequency 50 MHz; high frequency pulse generator; high frequency transmit circuit; high frequency ultrasound systems; low noise amplifier; nondestructive testing; spatial resolution; transducers; transmission signal switch circuit; Bandwidth; Bridge circuits; Gallium nitride; MOSFET; Switches; Ultrasonic imaging; GaN FET; High Frequency Ultrasound; T/R switch;
Conference_Titel :
Ultrasonics Symposium (IUS), 2014 IEEE International
Conference_Location :
Chicago, IL
DOI :
10.1109/ULTSYM.2014.0395